• DocumentCode
    2004925
  • Title

    Partial discharges in Aluminium nitrite ceramic substrates

  • Author

    Vu, T.A.T. ; Augé, J.L. ; Lesaint, O. ; Do, M.T.

  • Author_Institution
    Grenoble Electr. Eng. Lab. (G2E Lab.), Grenoble Univ., Grenoble, France
  • fYear
    2010
  • fDate
    4-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Aluminium nitrite (AlN) or alumina (Al2O3) substrates are widely used in power electronics modules, due to their ability to provide both electrical insulation, and heat conduction properties. A gel layer usually covers the substrate, semiconductor chips, and bondings to prevent partial discharges (PD) from occurring within the module. However, at high voltage PDs can be observed in high electric field regions, mainly at the sharp edges of copper tracks on the substrate. In this study, we try to determine the origin of these PDs. Phase resolved PD recordings (PRPD) and optical visualisation at very high sensitivity are carried out on substrates embedded in gel or insulating liquids. PD features are very different from those obtained in needle-plane geometry in gel or liquid. The main conclusion is that PDs of low amplitudes probably originate from the ceramic itself, due to the presence of numerous μm-sized pores in sintered materials.
  • Keywords
    alumina; aluminium compounds; ceramic insulation; partial discharges; substrates; alumina substrates; aluminium nitrite ceramic substrates; electrical insulation; gel; heat conduction; insulating liquids; optical visualisation; partial discharges; phase resolve PD recordings; sintered materials; Capacitors; Ceramics; Current measurement; Partial discharges; Petroleum; Substrates; IGBT module; partial discharge; silicone gel; silicone oil;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on
  • Conference_Location
    Potsdam
  • Print_ISBN
    978-1-4244-7945-0
  • Electronic_ISBN
    978-1-4244-7943-6
  • Type

    conf

  • DOI
    10.1109/ICSD.2010.5568137
  • Filename
    5568137