Real-time health state assessment method for MOSFET based on time stress analysis

Author

Kehong, Lv ; Jing, Qiu ; Guanjun, Liu ; Peng, Yang

Author_Institution

Coll. of Mechatron. & Autom, Nat. Univ. of Defense Technol., Changsha, China

fYear

2011

fDate

24-25 May 2011

Firstpage

1

Lastpage

4

Abstract

It has already been realized that the main external factor of MOSFET degradation or deviation from an expected normal condition is the time stress such as work and environment stresses. This paper introduced a real-time damage assessment method for MOSFET based on time stress analysis and failure models. And then, A health state assessment method was researched based on real-time damage information. The detailed process and algorithm of the method were studied based on neural network and fuzzy Choquet integral technologies. Finally, the validity of the method in this paper was proved by an experimental study of n-MOSFET.

Keywords

MOSFET; electronic engineering computing; failure analysis; fuzzy systems; integral equations; neural nets; stress analysis; MOSFET; environment stress; failure models; fuzzy Choquet integral technology; neural network; real-time damage assessment method; real-time health state assessment method; time stress analysis; work stress; Analytical models; Biomedical monitoring; Failure analysis; MOSFET circuits; Monitoring; Stress; Accumulated damage; Fuzzy integral; Health state assessment; Time stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Prognostics and System Health Management Conference (PHM-Shenzhen), 2011

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-7951-1

Electronic_ISBN

978-1-4244-7949-8

Type

conf

DOI

10.1109/PHM.2011.5939537

Filename

5939537