High sensitivity CMOS microfluxgate sensor

Author

Schneider, M. ; Kawahito, S. ; Tadokoro, Y. ; Baltes, H.

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

907

Lastpage

910

Abstract

The first microfluxgate based on a standard CMOS process is presented. The ferromagnetic sensor cores are electrodeposited at room temperature on top of the chip passivation. The post-processing is fully compatible with all standard IC technologies. The second harmonic of the sensor output voltage exhibits a linear response to small magnetic fields below 50 /spl mu/T. The linearity error including hysteresis is smaller than 1.2% full scale. The angular field response deviates less than 1.6% from a sine function. The sensor has a maximum sensitivity of 2.7 V/T at 2 MHz at a power consumption of 60 mW. The equivalent signal noise is 6 nT//spl radic/Hz at 10 Hz.

Keywords

CMOS integrated circuits; electrodeposits; fluxgate magnetometers; magnetic cores; magnetic sensors; microsensors; 10 Hz to 2 MHz; 50 muT; 60 mW; CMOS microfluxgate sensor; IC technology; angular magnetic field; chip passivation; electrodeposited ferromagnetic core; equivalent signal noise; hysteresis; linear response; linearity error; power consumption; second harmonic; sensitivity; sine function; CMOS process; CMOS technology; Energy consumption; Linearity; Magnetic cores; Magnetic hysteresis; Magnetic sensors; Passivation; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650528

Filename

650528