Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs

Author

Joon-Bae Moon ; Dong-Il Moon ; Yang-Kyu Choi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

61

Issue

3

fYear

2014

fDate

Jun-14

Firstpage

1420

Lastpage

1425

Abstract

The influence of the total ionizing dose (TID) on sub-100 nm gate-all-around (GAA) MOSFETs is investigated through experiments and numerical simulations. Particularly, the TID effect is explored for various gate lengths and radiation doses. The radiation-induced charges and traps under the gate spacer result in changes of the device characteristics and is a dominant factor to cause the device degradation. This phenomenon is experimentally examined by the junction modification of GAA MOSFETs and supported by three-dimensional numerical simulations.

Keywords

MOSFET; numerical analysis; radiation hardening (electronics); GAA; TID effect; device characteristics; gate lengths; gate spacer; gate-all-around MOSFETs; radiation doses; radiation-induced charges; radiation-induced traps; three-dimensional numerical simulations; total ionizing dose; Junctions; Logic gates; MOSFET; Numerical simulation; Radiation effects; Silicon; Simulation; Gamma-rays; gate-all-around MOSFET; radiation hardening; silicon nanowires; total ionizing dose effect;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2319245

Filename

6820796