DocumentCode
2007133
Title
Noise Characteristics of Millimeter-Vave HEMT Amplifiers
Author
Gupta, Madhu S. ; Grebliunas, John R. ; Narayanadas, D.
Author_Institution
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, Calif., 90265, U.S.A.
fYear
1989
fDate
4-7 Sept. 1989
Firstpage
1288
Lastpage
1293
Abstract
Extensive measurements of the noise properties of a low-noise mm-wave HEMT amplifier are carried out, as a function of the dc operating point of the active devices. These are used to determine the bias-dependence of the noise characteristics, and the relationship between the associated power gain and the maximum power gain. The results provide an estimate of the bias sensitivity of the amplifier performance at the low-noise operating point, and establish a quantitative trade-off between input port matching for minimum noise figure and for maximum power gain.
Keywords
Active noise reduction; Circuit noise; Design optimization; HEMTs; Impedance matching; Low-noise amplifiers; Millimeter wave measurements; Millimeter wave technology; Noise figure; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1989. 19th European
Conference_Location
London, UK
Type
conf
DOI
10.1109/EUMA.1989.334013
Filename
4132856
Link To Document