Theoretical modeling of thermoelectricity in Bi nanowires

Author

Sun, X. ; Lin, Y.M. ; Cronin, S.B. ; Dresselhaus, M.S. ; Ying, J.Y. ; Chen, G.

Author_Institution

Dept. of Phys., MIT, Cambridge, MA, USA

fYear

1999

fDate

Aug. 29 1999-Sept. 2 1999

Firstpage

394

Lastpage

397

Abstract

A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on the nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small (/spl les/10 nm) nanowire widths.

Keywords

band structure; bismuth; carrier density; effective mass; nanostructured materials; quantum wires; thermoelectric power; Bi; Bi nanowires; Bi wire size; carrier concentration; electronic band structure; thermoelectric figure of merit; thermoelectricity; Bismuth; Charge carrier processes; Effective mass; Electrons; Ellipsoids; Nanowires; Potential well; Tensile stress; Thermoelectricity; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1999. Eighteenth International Conference on

Conference_Location

Baltimore, MD, USA

ISSN

1094-2734

Print_ISBN

0-7803-5451-6

Type

conf

DOI

10.1109/ICT.1999.843413

Filename

843413

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2007913