• DocumentCode
    2008346
  • Title

    A generic voltage comparator analog cell produced in standard digital CMOS technologies

  • Author

    Dowlatabadi, Ahmad Baghai ; Connelly, J.Alvin

  • Author_Institution
    Enable Semicond. Inc., San Jose, CA, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    35
  • Abstract
    A voltage comparator has been developed to be employed as an analog cell in standard digital CMOS processes. The design is generic to a variety of CMOS technologies with various minimum feature sizes. The comparator was used in a mixed-signal application built in a Hewlett-Packard 1.2 μm process and operated from a single 5 V power supply. The circuit was later built in 0.8 μm and 2.0 μm HP processes provided by MOSIS. All of the samples achieved a measured nominal input offset voltage of less than 2 mV without using any input offset voltage correction technique, and had 1 mV sensitivity regardless of the chosen process. The typical response time of the comparator with a 10 mV differential input signal was 33 ns, 80 ns, and 20 ns for circuits built in 1.2 μm, 2.0 μm and 0.8 μm technologies, respectively
  • Keywords
    CMOS integrated circuits; cellular arrays; comparators (circuits); mixed analogue-digital integrated circuits; noise generators; 0.8 to 2.0 micron; 20 to 80 ns; 5 V; MOSIS; analog cell; differential input signal; generic voltage comparator; minimum feature sizes; mixed-signal application; nominal input offset voltage; response time; standard digital CMOS technologies; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Clocks; Delay; Noise generators; Power supplies; Pulse amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1996., IEEE 39th Midwest symposium on
  • Conference_Location
    Ames, IA
  • Print_ISBN
    0-7803-3636-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1996.594019
  • Filename
    594019