DocumentCode
2008346
Title
A generic voltage comparator analog cell produced in standard digital CMOS technologies
Author
Dowlatabadi, Ahmad Baghai ; Connelly, J.Alvin
Author_Institution
Enable Semicond. Inc., San Jose, CA, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
35
Abstract
A voltage comparator has been developed to be employed as an analog cell in standard digital CMOS processes. The design is generic to a variety of CMOS technologies with various minimum feature sizes. The comparator was used in a mixed-signal application built in a Hewlett-Packard 1.2 μm process and operated from a single 5 V power supply. The circuit was later built in 0.8 μm and 2.0 μm HP processes provided by MOSIS. All of the samples achieved a measured nominal input offset voltage of less than 2 mV without using any input offset voltage correction technique, and had 1 mV sensitivity regardless of the chosen process. The typical response time of the comparator with a 10 mV differential input signal was 33 ns, 80 ns, and 20 ns for circuits built in 1.2 μm, 2.0 μm and 0.8 μm technologies, respectively
Keywords
CMOS integrated circuits; cellular arrays; comparators (circuits); mixed analogue-digital integrated circuits; noise generators; 0.8 to 2.0 micron; 20 to 80 ns; 5 V; MOSIS; analog cell; differential input signal; generic voltage comparator; minimum feature sizes; mixed-signal application; nominal input offset voltage; response time; standard digital CMOS technologies; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Clocks; Delay; Noise generators; Power supplies; Pulse amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.594019
Filename
594019
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