New 600V Lateral Superjunction Power MOSFETs Based on Embedded Non-Uniform Column Structure

Author

Permthammasin, K. ; Wachutka, G. ; Schmitt, M. ; Kapels, H.

Author_Institution

Inst. for Phys. of Electrotechnol., Munich Univ. of Technol.

fYear

2006

fDate

Oct. 2006

Firstpage

263

Lastpage

266

Abstract

New lateral power MOSFETs employing two different, non-uniform, column-shaped superjunction (SJ) structures are proposed for use in smart power ICs that require voltage ratings up to 600V. Using three-dimensional device simulations, the basic electrical characteristics of the new SJ MOSFETs have been evaluated, together with the effect of charge imbalance on the device performance. The simulation results show that the proposed devices exhibit excellent robustness against doping fluctuations, improve the specific on-resistance by as much as 47% compared to conventional RESURF LDMOS structures with similar voltage ratings, and can compete with existing other charge compensation devices

Keywords

charge compensation; power MOSFET; 3D device simulations; 600 V; RESURF LDMOS; charge compensation devices; charge imbalance; doping fluctuations; smart power integrated circuits; superjunction power MOSFET; Doping; Electric variables; MOSFETs; Neodymium; Physics; Power integrated circuits; Silicon; Substrates; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

1-4244-0369-0

Type

conf

DOI

10.1109/ASDAM.2006.331204

Filename

4133128