• DocumentCode
    2009760
  • Title

    In-situ study and modeling of the decreasing reaction rate at the end of CoSi2 formation

  • Author

    Delattre, R. ; Simola, R. ; Rivero, C. ; Serradeil, V. ; Perrin-Pellegrino, C. ; Thomas, O.

  • Author_Institution
    STMicroelectronics, Rousset, France
  • fYear
    2011
  • fDate
    8-12 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In-situ X-Ray diffraction was used to determine CoSi2 kinetics growth from 100 nm CoSi. In this work, we discuss about an unexpectedly slow reaction that is observed at the end of CoSi2 formation. A 1D model has also been developed from these experiments in order to reproduce the sequential growth of cobalt silicides and the end of the reaction experimentally observed in this study.
  • Keywords
    X-ray diffraction; cobalt compounds; semiconductor materials; CoSi2 formation; CoSi2 kinetics growth; CoSi2; cobalt silicides; in-situ X-ray diffraction; size 100 nm; Cobalt; Kinetic theory; Semiconductor device modeling; Silicidation; Silicides; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
  • Conference_Location
    Dresden
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0503-8
  • Type

    conf

  • DOI
    10.1109/IITC.2011.5940309
  • Filename
    5940309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2009760