Modulation of Schottky barrier height for NiSi/Si(110) diodes using an antimony interlayer

Author

Guo, Xiao ; Xu, Yao-Juan ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2011

fDate

8-12 May 2011

Firstpage

1

Lastpage

3

Abstract

The barrier height modulation of Ni-silicided Schottky contacts fabricated on n-Si(100), n-Si(110), p-Si(100) and p-Si(110) substrate using an antimony (Sb) interlayer was investigated. The Sb layer was directly sputter-deposited on Si substrate followed by the regular Ni deposition and rapid thermal annealing. It is revealed that NiSi can still form even with the Sb interlayer and the effective Schottky barrier height can be significantly modulated on all kinds of Si substrates.

Keywords

Schottky barriers; antimony; nickel compounds; rapid thermal annealing; semiconductor diodes; silicon; sputter deposition; NiSi-Si-Sb; NiSi/Si(110) diodes; Schottky barrier height modulation; Si; antimony interlayer; n-Si(100) substrate; n-Si(110) substrate; p-Si(100) substrate; p-Si(110) substrate; rapid thermal annealing; sputter deposition; Annealing; Modulation; Nickel; Schottky barriers; Schottky diodes; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Conference_Location

Dresden

ISSN

pending

Print_ISBN

978-1-4577-0503-8

Type

conf

DOI

10.1109/IITC.2011.5940360

Filename

5940360