DocumentCode
2011360
Title
RF MEMS switches for Wide I/O data bus applications
Author
Cohn, Michael B. ; Saechao, Kaosio ; Whitlock, Michael ; Brenman, Daniel ; Tang, Wallace T. ; Proie, Robert M.
Author_Institution
MicroAssembly Technol. Inc., Richmond, CA, USA
fYear
2013
fDate
6-13 Sept. 2013
Firstpage
1
Lastpage
8
Abstract
Wide I/O poses serious challenges due to the requisite high density of electronics and relays near the DUT, as well as high bandwidth. A 2×2mm MEMS switch has been demonstrated, offering >80% footprint reduction relative to a typical TO-can electromagnetic relay. A further benefit of its small size, the MEMS relay is able to operate up to Ka-band (40 GHz) with hot switch capability and repeatability of <;±50mΩ. To our knowledge, our latest SPDT device holds the current record in power handling for MEMS devices of 24 W at 10 million cycles.
Keywords
microrelays; system buses; DUT; RF MEMS switches; SPDT device; TO-can electromagnetic relay; footprint reduction; hot switch capability; hot switch repeatability; power 24 W; power handling; wide I-O data bus applications; Contacts; Micromechanical devices; Microswitches; Radio frequency; Relays; Substrates; ATE; MEMS Switch; Relay; Switch Matrix; TSV; Wide I/O;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference (ITC), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1089-3539
Type
conf
DOI
10.1109/TEST.2013.6651889
Filename
6651889
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