• DocumentCode
    2011946
  • Title

    Impact of Polarization Relaxation on Ferroelectric Memory Performance

  • Author

    Moazzami, R. ; Abt, N. ; Nissan-Cohen, Y. ; Shepherd, W.H. ; Brassington, M.P. ; Chenming Hu

  • Author_Institution
    Department of Electrical Engineering and Computer Sciences, University of California
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    61
  • Lastpage
    62
  • Keywords
    Capacitors; Circuit testing; Dielectric losses; Ferroelectric materials; Lead compounds; Logic; Nonvolatile memory; Optical polarization; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.705990
  • Filename
    705990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2011946