DocumentCode
2012325
Title
Nanostructure devices for logic and memory and beyond
Author
Tiwari, Sandip
Author_Institution
Cornell Univ., Ithaca, NY, USA
fYear
2012
fDate
17-21 Sept. 2012
Firstpage
28
Lastpage
35
Abstract
After six decades of device size reduction and its efficient use through hierarchical design, the semiconductor area encounters two major conflicting currents: (a) quantum, stochastic (atomic and signal/noise) and other probabilistic effects with size reduction at the bottom and (b) thermodynamic consequences in the inefficiencies of the information engine as a large numbers of devices are assembled together hierarchically at the top. This is the central intellectual challenge when discussing the future of nanostructure devices and their use in information machines. We discuss the conceptual fundamentals of the small and the large that ties this scale change that exists in time, size, energy, and other dimensions of the machinery. From this, we derive ideas for devices, robustness, information efficiency, and performance under practical constraints so that the next six decades are just as fruitful and useful for the society.
Keywords
logic devices; nanoelectronics; nanostructured materials; device size reduction; hierarchical design; information efficiency; information engine; information machine; logic; memory; nanostructure device; semiconductor area; thermodynamic consequence; Engines; Nanoscale devices; Noise; Probabilistic logic; Switches; Thermal noise; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
Conference_Location
Bordeaux
ISSN
1930-8876
Print_ISBN
978-1-4673-1707-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2012.6343327
Filename
6343327
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