• DocumentCode
    2012632
  • Title

    A Nonaqueous Way to Thermoelectric Nanowires

  • Author

    Sommerlatte, J. ; Lee, W. ; Scholz, R. ; Gösele, U. ; Bente, K. ; Nielsch, K.

  • Author_Institution
    Max Planck Inst. of Microstrucutre Phys., Halle
  • fYear
    2006
  • fDate
    6-10 Aug. 2006
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    We present the electrochemical deposition of Bi2S3 and Pb3xBi2(1-x)S3 into highly ordered porous alumina templates from organic electrolytes. These compounds and sulfosalts in general are semiconductors with a direct band gap transition. The band gap of the bulk Bi2S3-PbS alloys can be adjusted over a wide range from 0.25 eV up to 1.6 eV and exhibit a large variety of crystal phases. Those compounds are very suitable for the synthesis of crystallographically oriented 1D-nanostructures due to their modular crystallography. For the synthesis we dissolved 0.055 M (BiCl3, PbCl2) and 0.19 M elemental sulfur as precursors in dimethylsulfoxide (DMSO) as a nonaqueous solvent. The deposition took place under inert gas atmosphere at elevated temperatures (110degC). For the Bi2S3 we obtained nearly single crystalline nanowires and a homogenous pore filling up to membrane thickness of 30 mum. These nanowires exhibited a preferential orientation of the c-axis parallel to the nanowire axis. In case of lead dissolved in the structure in comparison to the corresponding crystal phase of the bulk material
  • Keywords
    bismuth compounds; crystal orientation; electrodeposition; energy gap; lead compounds; nanowires; semiconductor materials; thermoelectricity; 0.25 to 1.6 eV; 110 C; 30 micron; DMSO; Pb3xBi2(1-x)S3; bismuth sulfide-PbS alloys; bismuth trichloride precursor; crystal phases; crystallographically oriented 1D nanostructures; dimethylsulfoxide; direct band gap transition semiconductors; electrochemical deposition; elemental sulfur precursor; highly ordered porous alumina templates; lead dichloride precursor; modular crystallography; nanowire preferential orientation; nonaqueous solvent; organic electrolytes; single crystalline nanowires; sulfosalts; thermoelectric nanowires; Atmosphere; Bismuth; Crystallization; Crystallography; Filling; Nanowires; Photonic band gap; Solvents; Temperature; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2006. ICT '06. 25th International Conference on
  • Conference_Location
    Vienna
  • ISSN
    1094-2734
  • Print_ISBN
    1-4244-0811-3
  • Electronic_ISBN
    1094-2734
  • Type

    conf

  • DOI
    10.1109/ICT.2006.331362
  • Filename
    4133281