A fully packaged piezoelectric switch with lowvoltage actuation and electrostatic hold

Author

Cueff, Matthieu ; Defaÿ, Emmanuël ; Rey, Patrice ; Le Rhun, Gwenaël ; Perruchot, François ; Ferrandon, Christine ; Mercier, Denis ; Domingue, Frédéric ; Suhm, Aurélien ; Aid, M. ; Liu, Lianjiu ; Pacheco, Sergio ; Miller, Mel

Author_Institution

Leti, CEA, Grenoble, France

fYear

2010

fDate

24-28 Jan. 2010

Firstpage

212

Lastpage

215

Abstract

This paper reports RF characterization of a fully packaged RF MEMS piezoelectric switch. The switch demonstrates better than 0.8 dB insertion loss at 2 GHz and 30 dB isolation up to 10 GHz. The presented device combines a piezoelectric actuation and a low electrostatic hold voltage to improve contact force. Actuation voltages of the switch are 5 V for both piezoelectric actuation and electrostatic hold. This actuation was sufficient to obtain contact resistance lower than 2 ohms. The switch is packaged by wafer-level packaging technology using gap control, AuSn eutectic bonding and post-process Thru-Silicon Vias.

Keywords

contact resistance; electrostatics; gold compounds; microswitches; piezoelectric devices; wafer level packaging; AuSn; contact force; contact resistance; eutectic bonding; frequency 2 GHz; fully packaged RF MEMS piezoelectric switch; gap control; insertion loss; low electrostatic hold voltage; low-voltage actuation; piezoelectric actuation; thru-silicon vias; voltage 5 V; wafer-level packaging technology; Contact resistance; Electrostatics; Insertion loss; Low voltage; Packaging; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Conference_Location

Wanchai, Hong Kong

ISSN

1084-6999

Print_ISBN

978-1-4244-5761-8

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2010.5442529

Filename

5442529