Thermoelectric properties on n-type Si80Ge20 with different Dopants

Author

Xu, Gui-Ying ; Jiang, Huawei ; Zhang, Chunyan ; Wu, Xiaofeng ; Niu, Sitong

Author_Institution

Lab. of Special Ceramics & Powder Metall., Beijing Univ. of Sci. & Technol.

fYear

2006

fDate

6-10 Aug. 2006

Firstpage

272

Lastpage

275

Abstract

Si_xGe_1-x is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si₈₀Ge₂₀ alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si₈₀Ge₂₀ respectively by Seebeck coefficient of n type Si₈₀Ge₂₀ at same time

Keywords

Ge-Si alloys; Seebeck effect; antimony; boron; gallium; gallium compounds; indium; indium compounds; phosphorus; semiconductor doping; semiconductor materials; Seebeck coefficient; Si₈₀Ge₂₀:B; Si₈₀Ge₂₀:Ga; Si₈₀Ge₂₀:GaP; Si₈₀Ge₂₀:In; Si₈₀Ge₂₀:InSb; Si₈₀Ge₂₀:P; Si₈₀Ge₂₀:Sb; multiplex dopant; n-type silicon-germanium alloy; p-type dopants; thermoelectric materials; thermoelectric properties; Composite materials; Inorganic materials; Materials science and technology; Powders; Semiconductor materials; Temperature; Thermal conductivity; Thermoelectricity; X-ray diffraction; X-ray scattering; Si80Ge20 alloy; Thermoelectric Materials; multiplex dopants;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2006. ICT '06. 25th International Conference on

Conference_Location

Vienna

ISSN

1094-2734

Print_ISBN

1-4244-0811-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2006.331367

Filename

4133286