DocumentCode
2013225
Title
New Integration Technology for PbTe Element
Author
Long, Chunquan ; Yan, Yong ; Zhang, Jianzhong ; Ren, Baoguo ; Wang, Zeshen
Author_Institution
Tianjin Inst. of Power Sources
fYear
2006
fDate
6-10 Aug. 2006
Firstpage
386
Lastpage
389
Abstract
The paper reports a new technology for integration of PbTe elements. In traditional procedure, the first step is to prepare PbTe materials, then to bond them together with electrodes. We press the PbTe powder together with the powder of electrode and buffer materials by powder metallurgy after PbTe alloy was prepared, and obtain the elements directly. The paper described the technical process in detail. The authors prepared some samples of N-type PbTe elements using the technology. The electrode, buffer, PbTe material and their interfaces of the prepared samples are characterized by SEM and ED. The contact resistances have been measured and compared with the sample prepared by traditional technology. The results indicate that the proposed technology is easy, economic and feasible. It may simplify preparation process of PbTe elements, reduce the times PbTe materials suffered at high temperature and decrease the contact resistance
Keywords
IV-VI semiconductors; contact resistance; electrodes; electron diffraction; lead compounds; narrow band gap semiconductors; powder metallurgy; pressing; scanning electron microscopy; ED analysis; PbTe; SEM analysis; contact resistances; electrodes; element integration; powder metallurgy; pressing; Bonding; Contact resistance; Electrodes; Furnaces; Leg; Nickel; Paper technology; Powders; Temperature; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2006. ICT '06. 25th International Conference on
Conference_Location
Vienna
ISSN
1094-2734
Print_ISBN
1-4244-0811-3
Electronic_ISBN
1094-2734
Type
conf
DOI
10.1109/ICT.2006.331278
Filename
4133311
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