• DocumentCode
    2013472
  • Title

    Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write

  • Author

    Zhang, Leqi ; Cosemans, Stefan ; Wouters, Dirk J. ; Groeseneken, Guido ; Jurczak, Malgorzata

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    282
  • Lastpage
    285
  • Abstract
    A numerical framework is developed to analyze the requirements of Self-Rectifying Resistive RAM cells for using in cross-point arrays. This paper analyzes the relation between maximum array size and cell characteristics, such as non-linearity, absolute current level and on/off ratio. Furthermore, optimal bias conditions are determined, and the advantage compared to a standard ½ voltage bias scheme is discussed.
  • Keywords
    random-access storage; cell parameter; cross-point array; maximum RRAM array size; numerical framework; self-rectifying resistive RAM cell; Arrays; Flash memory; Leakage current; Linearity; Microprocessors; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343388
  • Filename
    6343388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013472