• DocumentCode
    2013618
  • Title

    High temperature behaviour of GaN-on-Si high power MISHEMT devices

  • Author

    Wellekens, Dirk ; Venegas, Rafael ; Kang, Xuanwu ; Zahid, Mohammed ; Wu, Tian-Li ; Marcon, Denis ; Srivastava, Puneet ; Van Hove, Marleen ; Decoutere, Stefaan

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    302
  • Lastpage
    305
  • Abstract
    The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.
  • Keywords
    MIS devices; dielectric properties; gallium compounds; power HEMT; semiconductor device reliability; thermal stability; GaN; VDMOS device; bilayer gate dielectric; high power MISHEMT devices; high temperature behaviour; reliability; switching behaviour; thermal stability; Gallium nitride; HEMTs; Logic gates; Stress; Temperature; Temperature measurement; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-1707-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2012.6343393
  • Filename
    6343393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2013618