• DocumentCode
    2014092
  • Title

    27.12MHz GaN Bi-directional resonant power converter

  • Author

    Gu, Lei ; Liang, Wei ; Raymond, Luke C. ; Rivas-Davila, Juan

  • Author_Institution
    Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  • fYear
    2015
  • fDate
    12-15 July 2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Resonant dc-dc converter regularly use Schottky diodes for high frequency rectification. Si Schottky diodes have relatively low voltage ratings and present reverse-recovery type losses when driven hard enough. SiC Schottky diodes can operate at high frequencies, but incur higher conduction losses. This paper presents a bidirectional dc-dc resonant converter having two ground referenced switches. The prototype converter delivers 400 W between a source of 170 V and a load of 50 V while delivering 250 W in the opposite direction. The converter presented herein can potentially be used in applications such as wireless power transfer, fuel cell and battery applications, bus converters, etc.
  • Keywords
    DC-DC power converters; Inverters; Logic gates; Prototypes; Resistance; Schottky diodes; Switching frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Modeling for Power Electronics (COMPEL), 2015 IEEE 16th Workshop on
  • Conference_Location
    Vancouver, BC, Canada
  • Type

    conf

  • DOI
    10.1109/COMPEL.2015.7236440
  • Filename
    7236440