DocumentCode
2014809
Title
Technological and physical problems of InAs-linear IR Mis-structures array
Author
Kuryshev, Georgy L.
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
383
Lastpage
385
Abstract
Technology and design of linear 1×384 MIS photodetectors on InAs homoepitaxial substrate have been developed. The experimental results on IR linear arrays (IR LA) intended for rapid IR spectrometers with registration time 0.1-50 ms are presented.
Keywords
MIS structures; indium compounds; infrared spectrometers; photodetectors; IR spectrometers; InAs; MIS photodetectors; homoepitaxial substrate; linear IR MIS-structures array; Anodes; Films; Logic gates; Seminars; Infrared; MIS structure; detectivity; hybrid;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568655
Filename
5568655
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