• DocumentCode
    2014809
  • Title

    Technological and physical problems of InAs-linear IR Mis-structures array

  • Author

    Kuryshev, Georgy L.

  • Author_Institution
    Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
  • fYear
    2010
  • fDate
    June 30 2010-July 4 2010
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    Technology and design of linear 1×384 MIS photodetectors on InAs homoepitaxial substrate have been developed. The experimental results on IR linear arrays (IR LA) intended for rapid IR spectrometers with registration time 0.1-50 ms are presented.
  • Keywords
    MIS structures; indium compounds; infrared spectrometers; photodetectors; IR spectrometers; InAs; MIS photodetectors; homoepitaxial substrate; linear IR MIS-structures array; Anodes; Films; Logic gates; Seminars; Infrared; MIS structure; detectivity; hybrid;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-6626-9
  • Type

    conf

  • DOI
    10.1109/EDM.2010.5568655
  • Filename
    5568655