• DocumentCode
    2015265
  • Title

    Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx

  • Author

    Kim, Nicholas H. ; Ramamurthy, Praveen C. ; Mawsi, L.J. ; Kuech, T.F.

  • Author_Institution
    Dept. of Electr. Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    208
  • Abstract
    This paper reports on the optical and structural properties of In0.5Ga0.5As (nominal composition) quantum dots (QDs)grown on GaAs1-xPx for x=0-0.45. This study demonstrates that the QD ground state emission wavelength can be varied over a span of 100 nm by adjusting the P-content of the barrier layer. Thus, these structures have potential for achieving high performance laser structures in the shorter wavelength (λ < 1 μm) wavelength region.
  • Keywords
    gallium arsenide; gallium compounds; ground states; indium compounds; quantum dot lasers; semiconductor quantum dots; InGaAs quantum dots; InGaAs-GaAs1-xPx; barrier layer; ground state emission; high performance laser structures; optical properties; structural properties; tensile-strained GaAs1-xPx; Gallium arsenide; Indium gallium arsenide; Land surface temperature; MOCVD; Optical materials; Quantum computing; Quantum dot lasers; Quantum dots; Stationary state; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363184
  • Filename
    1363184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2015265