DocumentCode
2015318
Title
Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer
Author
Walker, C.L. ; Sandall, I.C. ; Smowton, P.M. ; Sellers, I.R. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., UK
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
212
Abstract
We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce, the internal loss and inhomogeneous broadening, and improve the efficiency.
Keywords
optical losses; quantum dot lasers; spectral line broadening; 1.3 mum; GaAs spacer layer; InGaAs; high growth temperature spacer layer; improved gain performance; inhomogeneous broadening; internal loss reduction; loss performance; quantum dot lasers; Fiber lasers; Gallium arsenide; Laser theory; Optical materials; Performance gain; Performance loss; Quantum dot lasers; Stationary state; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363186
Filename
1363186
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