DocumentCode
2015579
Title
Monolithic integration of GaAs devices with completely fabricated Si CMOS
Author
Ma, Kai ; Chen, Ray ; Miller, David A B ; Harris, James S., Jr.
Author_Institution
Solid State & Photonics Lab., Stanford Univ., CA, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
230
Abstract
The paper reports on monolithic integration of poly-GaAs switches with a completely fabricated CMOS amplifier. A functional optical receiver is obtained without modifying the Si circuit performance. This approach is simple, with minimum fabrication disturbance limited entirely to the Si processing and greater applicability into much broader areas.
Keywords
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical receivers; silicon; CMOS amplifier; GaAs; Si; monolithic integration; optical receiver; polyGaAs switches; Bandwidth; Gallium arsenide; Glass; Monolithic integrated circuits; Optical receivers; Optical switches; Photoconducting materials; Photonics; Transfer functions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363195
Filename
1363195
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