• DocumentCode
    2016183
  • Title

    Large emitting area GaN based light emitting diode fabricated on conducting copper substrates

  • Author

    Chu, Jung-Tang ; Liang, Wcn-Dcng ; Chu, Chen-Fu ; Kuo, H.C. ; Wang, S.C.

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    2004
  • fDate
    7-11 Nov. 2004
  • Firstpage
    282
  • Abstract
    This letter reports on the large-area light-emission GaN LEDs with the size of 1050×1050 μm2 fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.
  • Keywords
    bonding processes; gallium compounds; light emitting diodes; semiconductor growth; wide band gap semiconductors; Cu; GaN; LLO; conducting copper substrates; illumination; large-area light-emission GaN LED; metal bonding; uniform current spreading; uniform light-emission pattern; Bonding; Contacts; Copper; Etching; Gallium nitride; Light emitting diodes; Light sources; Lighting; Substrates; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-8557-8
  • Type

    conf

  • DOI
    10.1109/LEOS.2004.1363221
  • Filename
    1363221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2016183