Effect of CoWP Capping Layers on Dielectric Breakdown of SiO2

Author

Gambino, J. ; Fen Chen ; Mongeon, S. ; Meatyard, D. ; Lee, Taewoo ; Lee, Bang-Wook ; Bamnolker, H. ; Hall, Leonard ; Li, Ning ; Hernandez, M. ; Little, P. ; Hamed, M. ; Ivanov, Ivan

Author_Institution

IBM Microelectron.

fYear

2007

fDate

11-13 July 2007

Abstract

Leakage and dielectric breakdown of SiO₂ are studied for Cu interconnect structures with either stand-alone CoWP or two-layer CoWP+SiN caps. Without a post-CoWP plasma clean, there are many early fails and the dielectric breakdown exhibits bimodal behavior. By adding a plasma clean after CoWP deposition, the early fails can be eliminated and high dielectric breakdown is achieved. The improvement in dielectric breakdown with the plasma clean is greater for the two-layer cap compared to the stand-alone cap, probably due to the extra plasma clean associated with SiN deposition.

Keywords

cobalt compounds; copper; dielectric materials; electric breakdown; integrated circuit interconnections; silicon compounds; tungsten compounds; CoWP; CoWP - Interface; Cu; Cu - Element; SiO₂; SiO₂ - Interface; capping layers; deposition; dielectric breakdown; interconnect structures; plasma clean; Copper; Dielectric breakdown; Dielectric devices; Electromigration; Microelectronics; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the

Conference_Location

Bangalore

Print_ISBN

978-1-4244-1014-9

Type

conf

DOI

10.1109/IPFA.2007.4378058

Filename

4378058