DocumentCode
2017014
Title
Blech Effect in Cu Interconnects with Oxide and Low-k Dielectrics
Author
Yuejin Hou ; Cher Ming Tan
Author_Institution
Nanyang Technol. Univ., Singapore
fYear
2007
fDate
11-13 July 2007
Abstract
This paper investigates the mechanism of the temperature dependence of the Blech product for both the Cu/oxide and Cu/low-k interconnections. Using finite element modeling (FEM), we demonstrate that Blech product should be temperature dependent at high temperature if the inelastic behavior of Cu is considered. This inelastic behavior has not been taken into consideration in the previous works. The simulated Blech product is found to be consistent with the literature reported values.
Keywords
copper; finite element analysis; integrated circuit interconnections; low-k dielectric thin films; Blech effect; copper interconnect; finite element modeling; inelastic behavior; low-k dielectrics; oxide dielectrics; temperature dependence mechanism; Cathodes; Copper; Dielectrics; Electrons; Finite element methods; Integrated circuit interconnections; Mechanical factors; Silicon compounds; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378059
Filename
4378059
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