DocumentCode
2017184
Title
Novel fabrication of 3-D microstructures by volume oxidation of AlGaAs
Author
Hsu, Alan Y. ; Cich, Michael J. ; Vawter, Gregory A. ; Peake, Gregory M. ; Alford, Charles
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
366
Abstract
A novel method for fabricating AIGaAs microstructures is investigated. The process consists of a thermal volume oxidation of AIGaAs/GaAs epitaxy and selective etching of the resulting aluminum oxide.
Keywords
III-V semiconductors; aluminium compounds; etching; gallium arsenide; micro-optics; optical fabrication; oxidation; 3-D microstructures; AIGaAs microstructures; AlGaAs-GaAs; etching; thermal volume oxidation; volume oxidation; Aluminum oxide; Epitaxial growth; Etching; Fabrication; Gallium arsenide; Microstructure; Nanoscale devices; Oxidation; Shape; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363263
Filename
1363263
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