• DocumentCode
    2017562
  • Title

    Potential-dependence of additives distribution in copper electrodeposition via filling

  • Author

    Chen, Zhipeng ; Luo, Wei ; Zhu, Ying ; Li, Ming ; Gao, Liming

  • Author_Institution
    Institute of Microelectronic Materials & Technology, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Minhang District, China 200240
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    172
  • Lastpage
    176
  • Abstract
    Via filling by copper electrodeposition is of great interest for industry to realize 3D packaging and reduce cost. To achieve “bottom-up” filling with no voids and seams, numerous studies on additives mechanism have been conducted. The organic sulful-containing accelerator, bis(3-sulfopropyl) disulfide (SPS) and the inhibitor (e.g., poly(ethylene glycol) (PEG) ), are common additives in “bottom-up” filling of vias. This work investigates a straightforward method for “bottom-up” filling simulation of SPS-PEG additive system. In this method, the potential dependence of additives adsorption behavior was summarized and employed in further simulation. A model estimation method was applied to estimate the precision. This model was then utilized in Finite Element Method (FEM) simulation, and the results gave a glimpse of the defect formation in via filling.
  • Keywords
    Adsorption; Analytical models; Anodes; Digital signal processing; Implants; Packaging; Random access memory; TSV; copper electrodeposition; potential dependence adsorption; simulation method;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236569
  • Filename
    7236569