Application of Time Domain Reflectometry in Evaluating Irregular Inter-metallic Compound Growth in Gold Wire Bonds Encapsulated with Green Epoxy Mold Compound

Author

Wong, Johnson ; Seah, A. ; Chew, S.

Author_Institution

Cookson Electron. Semicond. Packaging

fYear

2007

fDate

11-13 July 2007

Abstract

In this paper, we have successfully used the comparative TDR technique as a means to detect and locate intermittent electrical failures in various packaged devices caused by weak interconnect interfaces or transmission traces that are degraded due to electromigration or intermetallic diffusion processes. A series of different common fail signatures from the resultant TDR waveforms can be correlated with cross section images of weak interconnect interfaces will be shared.

Keywords

electromigration; gold alloys; lead bonding; polymers; time-domain reflectometry; electrical failures; electromigration; encapsulation; gold wire bonds; green epoxy mold compound; interconnect interfaces; intermetallic compound; irregular growth; time domain reflectometry; Electromagnetic compatibility; Failure analysis; Gold; Integrated circuit interconnections; Integrated circuit packaging; Intermetallic; Reflectometry; Semiconductor device packaging; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the

Conference_Location

Bangalore

Print_ISBN

978-1-4244-1014-9

Type

conf

DOI

10.1109/IPFA.2007.4378085

Filename

4378085