Millimeter-wave modeling of isolated MOS substrate network through gate-bulk measurements

This paper presents a novel methodology for the extraction of the substrate network components in n-MOS isolated devices, based on original “Gate-Bulk” structures. Since the main model acceptance criteria is here the frequency dependency, a large part is devoted to accurately model distributed effects in the p-well and the deep n-well layers up to 80 GHz. The main structures are completed with intermediate structures which give a better understanding of the substrate distribution effects.