DocumentCode
2018881
Title
Development of planar magnetotransistor design by three-dimensional device-technological modeling
Author
Kozlov, Anton V. ; Tikhonov, Robert D. ; Polomoshnov, Sergey A.
Author_Institution
Moscow Inst. of Electron. Technol., Tech. Univ., Moscow, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
208
Lastpage
212
Abstract
The three-dimensional model of planar dual-collector bipolar magnetotransistor has been developed by the device-technological modeling Synopsys Sentaurus system. Relative current sensitivity of the magnetotransistor in the chosen mode has been calculated. The mechanisms of magnetic sensitivity increase of existing planar magnetotransistors have been considered.
Keywords
bipolar transistors; magnetoelectronics; semiconductor device models; Synopsys Sentaurus system; magnetic sensitivity; planar dual-collector bipolar magnetotransistor; planar magnetotransistor design; relative current sensitivity; three-dimensional device-technological modeling; Seminars; Substrates; Planar magnetotransistor; device-technological modeling; relative current magnetosensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568825
Filename
5568825
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