High-efficiency mid-IR "W" diode lasers

Author

Bewley, W.W. ; Canedy, C.L. ; Vurgaftman, I. ; Lindle, J.R. ; Kim, C.S. ; Kim, Marn-Go ; Meyer, J.R.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

555

Abstract

This paper presents recent progress on high-efficiency mid-IR W diode lasers grown by molecular beam epitaxy. Photoluminescence (PL) and lasing characteristics of a series of W structures are measured in order to determine the optimal conditions for growth of the active region. Results show that the highest PL intensities, narrowest PL and lasing linewidths, lowest lasing thresholds, and highest lasing efficiencies are obtained for growth temperatures in the 480-510°C range, which is considerably higher than previously thought optimal.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; infrared sources; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor lasers; spectral line narrowing; 480 to 510 degC; InAs-AlSb-GaSb; PL intensities; W structure lasers; diode lasers; high-efficiency lasers; lasing characteristics; lasing efficiencies; lasing linewidths; lasing thresholds; midIR lasers; molecular beam epitaxy; photoluminescence; Diode lasers; Gas lasers; Laser transitions; Optical devices; Optical pulses; Optical pumping; Optical superlattices; Stimulated emission; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363359

Filename

1363359