• DocumentCode
    2022797
  • Title

    Microwave and Millimeter-Wave Transistor Devices

  • Author

    Takayama, Yoichiro

  • Author_Institution
    Microelectronics Research Laboratories, NEC Corporation Miyazaki, Miyamae-ku, Kawasaki 213, JAPAN
  • fYear
    1986
  • fDate
    8-12 Sept. 1986
  • Firstpage
    97
  • Lastpage
    106
  • Abstract
    This paper will review the recent advances in microwave and millimeter-wave, especially above X-band, transistors and monolithic integrated circuits in Japan. GaAs and related-compound semiconductor devices including GaAs MESFETs, GaAs MMICs, two-dimensional electron gas transistors and heterojunction bipolar transistors will be focussed.
  • Keywords
    Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Microwave devices; Microwave transistors; Millimeter wave integrated circuits; Millimeter wave transistors; Monolithic integrated circuits; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1986. 16th European
  • Conference_Location
    Dublin, Ireland
  • Type

    conf

  • DOI
    10.1109/EUMA.1986.334178
  • Filename
    4133661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2022797