Pulsed operation and performance of commercial GaN HEMTs

Author

Fornetti, F. ; Morris, K.A. ; Beach, M.A.

Author_Institution

Centre for Commun. Res., Univ. of Bristol, Bristol, UK

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

226

Lastpage

229

Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100-400 kHz are presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5 GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; Cree Inc; GaN; commercial HEMT pulsed operation; frequency 100 kHz to 400 kHz; frequency 3.5 GHz; high electron mobility transistor performance; pulse repetition frequencies; pulsed RF applications; pulsed RF waveforms; transistor gate bias; Capacitance; Gallium nitride; HEMTs; MODFETs; MOSFETs; Radar applications; Radio frequency; Robustness; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296375