DocumentCode
2023755
Title
Thermal analysis of high power LED array system
Author
Zhang, Guangchen ; Feng, Shiwei ; Guo, Chunsheng ; Ge, Chenning ; Ding, Kaikai
Author_Institution
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
fYear
2010
fDate
21-25 Feb. 2010
Firstpage
299
Lastpage
304
Abstract
It´s proved that the physical meaning of the electrical average temperature rise of series LED array system tested by electrical temperature sensitive parameter (TSP) method is the arithmetic mean of the temperature rises of all sub-LEDs in the system. Based on this relationship, a novel method to evaluate the temperature distribution of series LED systems by scan measurement and recursive calculation is proposed in this paper. Transient heating response measurements of GaN based high power LED arrays are presented to provide experimental verification for this method. The results show that this method is real-time valid and package form independent. The error between the results of individual measurement and this proposed method is less than ±2°C.
Keywords
III-V semiconductors; arrays; gallium compounds; heating; light emitting diodes; power semiconductor diodes; recursion method; semiconductor device measurement; temperature distribution; temperature measurement; thermal analysis; wide band gap semiconductors; GaN; electrical average temperature rise; electrical temperature sensitive parameter method; high power LED array system; recursive calculation; scan measurement; series LED array; temperature distribution; thermal analysis; transient heating response; Decision support systems; Light emitting diodes; LED; electrical method; temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2010. SEMI-THERM 2010. 26th Annual IEEE
Conference_Location
Santa Clara, CA
ISSN
1065-2221
Print_ISBN
978-1-4244-9458-3
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2010.5444274
Filename
5444274
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