Class-A power amplifier design technique based on electron device low-frequency characterization

In this paper, a new approach to class-A power amplifier design is proposed. Such a technique, which is mostly based on low-frequency characterisation, allows to reach the same design goals obtained through expensive nonlinear setups operating at microwave frequencies. In order to demonstrate the effectiveness of the proposed design technique, a practical example of class-A power amplifier design, based on GaN technology, is deeply investigated.