RF-MEMS switches based on a low-complexity technology and related aspects of MMIC integration

Author

Ziegler, V. ; Siegel, C. ; Schönlinner, B. ; Prechtel, U. ; Schumacher, H.

Author_Institution

EADS Corp. Res. Center Germany, Ottobrunn, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

289

Lastpage

292

Abstract

This paper presents RF-MEMS devices, which are based on low-complexity fabrication technologies. Tuneable filters and phase shifting elements for Ka-band have already been realized by using a fabrication process which requires only two photo-lithographic steps. Adding just one more lithographic process step results in the realization of high performance switching devices with insertion losses of -0.2 dB at 30 GHz. Due to their low fabrication complexity, all these RF-MEMS devices minimize technological challenges and have the potential for being highly reliable due to their design principle. In addition, these technologies may pave the way for the monolithic integration of RF-MEMS based circuits with compound semiconductor MMICs for highly integrated and high performance multi-functional circuits.

Keywords

MMIC phase shifters; microswitches; microwave filters; -0.2 dB; 30 GHz; MMIC integration; RF-MEMS switches; low-complexity fabrication technologies; phase shifting elements; tuneable filters; Fabrication; Filters; Insertion loss; Integrated circuit reliability; Integrated circuit technology; MMICs; Performance loss; Radiofrequency microelectromechanical systems; Switches; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637207