A 100 W high-efficiency GaN HEMT amplifier for S-band wireless system

Author

Maekawa, Arata ; Nagahara, Masaki ; Yamamoto, Takashi ; Sano, Seigo

Author_Institution

Eedyna Devices Inc., Japan

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

497

Lastpage

500

Abstract

We have successfully developed a 100 W AlGaN/GaN power amplifier with a bandwidth of 300 MHz in S-band, operating at 50 V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100 W and a high linear gain of more than 13.5 dB in the frequency range of 2.6 GHz to 2.9 GHz under CW or pulsed conditions [200 usec (pulse width) and 2 msec (period)]. High drain efficiency of 58% was also achieved at an output power of 100 W and frequency of 2.8 GHz. To the best of our knowledge this is the first report of 100 W AlGaN/GaN HEMT amplifier developed for S-band high power application.

Keywords

III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; microwave power amplifiers; power HEMT; wide band gap semiconductors; 100 W; 2.6 to 2.9 GHz; 50 V; 58 percent; AlGaN-GaN; HEMT amplifier; S-band wireless system; power amplifier; Aluminum gallium nitride; Bandwidth; Frequency; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637264