DocumentCode
2026058
Title
Reliability evaluation method of low temperature poly-silicon TFTs using dynamic stress
Author
Uraoka, Y. ; Hatayama, T. ; Fuyuki, T.
Author_Institution
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
fYear
2000
fDate
2000
Firstpage
158
Lastpage
162
Abstract
Evaluation method of reliability of low temperature poly-Si using dynamic stress is proposed. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and the number of repetition. This degradation is dominated by hot electrons and can be improved by adopting LDD structures.
Keywords
carrier mobility; elemental semiconductors; hot carriers; semiconductor device reliability; semiconductor device testing; silicon; thin film transistors; LDD structure; ON current; Si; carrier mobility; dynamic stress; hot electron degradation; low temperature growth; polysilicon TFT; reliability testing; Active matrix liquid crystal displays; Circuit testing; Degradation; Materials science and technology; Pulse measurements; Pulsed laser deposition; Stress measurement; Temperature; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN
0-7803-6275-7
Type
conf
DOI
10.1109/ICMTS.2000.844424
Filename
844424
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