On-chip GaAs-HBT broadband-coupled high-bitrate modulator driver TWAs

Author

Meliani, C. ; Rudolph, M. ; Heinrich, W.

Author_Institution

Ferdinand-Braun-Inst. fur Hoechstfrequenztechnik, Berlin, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

661

Lastpage

664

Abstract

A technique to connect two broadband GaAs HBT TWAs is presented. It covers the full range from DC to high frequency and is suitable for high bitrate (40 Gb/s) transmission circuits. This behavior is achieved by modifying the response of one TWA so that it compensates the low-frequency losses. This technique is truly broadband because it uses only elements which are directly connected, and thus is not limited at very low frequencies. Each single TWA delivers 8 dB of broadband gain at a 3 dB cut-off-frequency of 26 GHz. Using this interconnect technique, a total broadband gain of 14.5 dB is obtained.

Keywords

III-V semiconductors; coupled circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; modulators; travelling wave amplifiers; wideband amplifiers; 14.5 dB; 26 GHz; 40 Gbit/s; 8 dB; broadband-coupled high-bitrate modulator driver; interconnect technique; low-frequency losses; onchip HBT; transmission circuits; traveling wave amplifiers; Bandwidth; Broadband amplifiers; Distributed amplifiers; Driver circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637306