Wide-band multi-bias equivalent circuit extraction for FinFET transistors accommodating high-frequency kink-behaviours

A direct analytical extraction of a wide-band non-quasi-static linear table-based FET model is demonstrated in this study. It captures and encapsulates the undesired RF-behaviours that frequently appear in high-frequency transistors especially for sub-micron silicon technologies. The undesired kink-behaviour is compensated for by introduction of lumped element RC networks in both extrinsic and intrinsic shells which match the physics and the cause of the behaviour. The model is validated using silicon Multi-Fin MOSFET transistors. Excellent agreement is achieved between measurements and model simulation.