Integrated passive devices on the selectively anodized aluminum oxide

Author

Yook, Jong-Min ; Yu, Je-In ; Kim, Young-Joon ; Kwon, Young-Se

Author_Institution

Depart. EECS, Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1654

Lastpage

1657

Abstract

By using selectively anodized aluminium, various IPDs (integrated passive devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (insertion loss) respectively with small size.

Keywords

Q-factor; aluminium; radiofrequency integrated circuits; thin film inductors; Q factors; frequency 0.9 GHz; frequency 2 GHz; frequency 2.45 GHz; high Q inductors; high density capacitors; integrated passive devices; loss 0.38 dB; loss 1.89 dB; selectively anodized aluminum oxide; spiral inductors; thin-film process; Aluminum oxide; Band pass filters; Capacitors; Costs; Electronics packaging; Fabrication; Radio frequency; Spirals; Substrates; Thin film inductors; Anodized aluminum; BPF; Diplexer; IPD; Integrated passive devices; LPF; MCM package; SIP;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296509