• DocumentCode
    2029956
  • Title

    X-band GaAs MMIC core chip

  • Author

    Barov, A.A. ; Kondratenko, A.V.

  • Author_Institution
    MICRAN Res. & Production Co., Tomsk, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    70
  • Lastpage
    71
  • Abstract
    This report presents results of design and manufacturing of X-band GaAs MMIC core chip for T/R modules of modern telecommunication and radiolocation systems. The MMIC are realized in the 0.18um pHEMT (ED02AH) process of OMMIC foundry.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; field effect MMIC; foundries; gallium arsenide; GaAs; OMMIC foundry; T/R modules; X-band GaAs MMIC core chip; design; manufacturing; modern telecommunication; pHEMT; radiolocation systems; size 0.18 mum; Arrays; Electronic mail; Gallium arsenide; MMICs; Microwave communication; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652612