DocumentCode

2031163

Title

Degradation of hard MOS devices at low temperature

Author

Fourches, N.T.

Author_Institution

DAPNIA/SEDI

fYear

2002

fDate

2002

Firstpage

15

Lastpage

18

Keywords

Annealing; CMOS technology; Degradation; Interface states; Ionizing radiation; MOS devices; MOSFETs; Stress; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on

ISSN

1155-4339

Print_ISBN

2-86883-606-2

Type

conf

DOI

10.1109/WOLTE.2002.1022442

Filename

1022442