DocumentCode
2031509
Title
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films
Author
Komiya, K. ; Omura, Y. ; Oka, T. ; Nagahara, M.
Author_Institution
Kansai University
fYear
2002
fDate
2002
Firstpage
103
Lastpage
106
Keywords
Conductive films; Current density; Electric breakdown; Fluctuations; Leakage current; MOS capacitors; Permittivity; Scattering; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN
1155-4339
Print_ISBN
2-86883-606-2
Type
conf
DOI
10.1109/WOLTE.2002.1022459
Filename
1022459
Link To Document