DocumentCode
2031618
Title
Effects of strain distribution on the optical gain of InGaN/AlInGaN
Author
Ahn, D. ; Park, S.-H. ; Koo, B.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea
fYear
2009
fDate
14-17 Sept. 2009
Firstpage
11
Lastpage
12
Abstract
Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs) is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Significant enhancement of optical gain is expected with the introduction of strain distribution layers.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; multilayers; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlInGaN; crystalline parameters; light emitting diode; multilayer quantum well structure; optical gain; strain distribution; Capacitive sensors; Crystallization; Electron optics; Gallium nitride; Light emitting diodes; Luminescence; Nonhomogeneous media; Optical polarization; Piezoelectric polarization; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on
Conference_Location
Gwangju
Print_ISBN
978-1-4244-4180-8
Type
conf
DOI
10.1109/NUSOD.2009.5297194
Filename
5297194
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