Advanced Process Monitoring and Control Methods for Poly Gate CD Targeting

Author

Underwood, J. ; Gray, J. ; Shepherd, N. ; Caldwell, M. ; Neel, M. ; Darlington, B.

Author_Institution

Freescale Semicond., Inc., Austin, TX

fYear

2006

fDate

22-24 May 2006

Firstpage

21

Lastpage

24

Abstract

Accurate poly critical dimension (CD) control is necessary to run speed-sensitive parts in high volume production. A source-of-variation study indicated that poly CD variation accounted for over 50% of end-of-line variation in speed and power for a critical production part. A team was established to implement process control methodologies to reduce poly CD variation. The team took a module-based approach - linking outputs from the lithography, etch, and implant areas to form the tightest possible control for optimal product performance

Keywords

lithography; process control; process monitoring; semiconductor device manufacture; end-of-line variation; poly critical dimension control; poly gate CD targeting; process control; process monitoring; Design optimization; Etching; Joining processes; Lithography; Manufacturing processes; Microprocessors; Monitoring; Process control; Production; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638718

Filename

1638718