Simultaneously printing the redistribution layer and filling of TSVs using a microengineered screen

Author

Kay, R.W. ; Cummins, G. ; Ng, Jack H.-G. ; Terry, J.G. ; Desmulliez, Marc Philippe Y. ; Walton, A.J.

Author_Institution

Additive Manuf. Res. Group, Loughborough Univ., Loughborough, UK

fYear

2012

fDate

5-7 Dec. 2012

Firstpage

14

Lastpage

18

Abstract

This article reports the results obtained by screen printing through a microengineered electroformed nickel screen to successfully fill TSVs and print a redistribution layer on Si wafers. Redistribution lines were deposited down to 40μm width at 70μm pitch. Straight through hole sections on the microengineered screen formed a stencil/screen hybrid region enabling TSVs to be filled down to 8.5:1 aspect ratio. However multiple print passes were required to completely fill the vias. Rheological properties of the printing medium play a major impact on the print printing performance.

Keywords

elemental semiconductors; printing; rheology; semiconductor technology; silicon; three-dimensional integrated circuits; Si; TSV filling; microengineered electroformed screen; print printing performance; printing medium; redistribution layer; redistribution layer printing; redistribution lines; rheological properties; screen hybrid region; screen printing; stencil hybrid region; straight through hole sections; Apertures; Filling; Packaging; Printing; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th

Conference_Location

Singapore

Print_ISBN

978-1-4673-4553-8

Electronic_ISBN

978-1-4673-4551-4

Type

conf

DOI

10.1109/EPTC.2012.6507042

Filename

6507042