Pattern Based Prediction for Plasma Etch

Author

Abrokwah, Kwaku O. ; Chidambaram, P.R. ; Boning, Duane S.

Author_Institution

Microsystems Tech. Labs., MIT, Cambridge, MA

fYear

2006

fDate

22-24 May 2006

Firstpage

77

Lastpage

82

Abstract

Plasma etching is a key process for pattern formation in integrated circuit (IC) manufacturing. Unfortunately, pattern dependent non-uniformities arise in plasma etching processes due to microloading and RIE lag. We contribute a semi-empirical methodology for capturing and modeling pattern dependent effects in plasma etching of ICs. We apply this methodology to the study of interconnect trench etching, and show that an integrated model is able to predict both pattern density and feature size dependent non-uniformities in trench depth

Keywords

integrated circuit interconnections; integrated circuit manufacture; isolation technology; pattern formation; sputter etching; ARDE; IC manufacturing; RIE lag; aspect ratio dependent etch; die level variation; feature level variation; integrated circuit manufacturing; interconnect trench etching; microloading; nonuniformities; pattern based prediction; pattern dependency; pattern formation; plasma etching; reactive ion etch; semiempirical methodology; Etching; Filters; Instruments; Micromechanical devices; Pattern formation; Plasma applications; Plasma density; Plasma materials processing; Predictive models; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2006. ASMC 2006. The 17th Annual SEMI/IEEE

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

1-4244-0254-9

Type

conf

DOI

10.1109/ASMC.2006.1638727

Filename

1638727